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Controlling the self-organization of InAs quantum dots upon growth by means of vapor-phase epitaxy on an antimony δ-doped GaAs buffer layer

  • Proceedings of the International Symposium “Nanophysics and Nanoelectronics-2010”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

This work examines the possibility of controlling the parameters of InAs/GaAs quantum dot arrays obtained by metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure with using antimony as a surfactant. The possibility of controlling the parameters and optical properties of InAs quantum dot arrays by varying the surface concentration of Sb atoms in a GaAs buffer layer surface is demonstrated. A model of quantum dot array formation in the presence of Sb atoms is proposed.

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Authors and Affiliations

  1. Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia

    A. V. Zdoroveishchev, N. V. Baidus’, B. N. Zvonkov & P. B. Demina

Authors
  1. A. V. Zdoroveishchev
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  2. N. V. Baidus’
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  3. B. N. Zvonkov
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  4. P. B. Demina
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Corresponding author

Correspondence to N. V. Baidus’.

Additional information

Original Russian Text © A.V. Zdoroveishchev, N.V. Baidus’, B.N. Zvonkov, P.B. Demina, 2011, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2011, Vol. 75, No. 1, pp. 31–33.

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Zdoroveishchev, A.V., Baidus’, N.V., Zvonkov, B.N. et al. Controlling the self-organization of InAs quantum dots upon growth by means of vapor-phase epitaxy on an antimony δ-doped GaAs buffer layer. Bull. Russ. Acad. Sci. Phys. 75, 25–27 (2011). https://doi.org/10.3103/S106287381101028X

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  • DOI: https://doi.org/10.3103/S106287381101028X

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