Abstract
The effect of light localization in photoluminescence (PL) and Raman scattering (RS) in silicon nanowires with diameter of 100 nm was investigated. The optical excitation was done by CW radiation of a YAG:Nd laser at 1.064 μm. The PL an RS intensities were found to increase strongly for the samples with Si nanowires in comparison with corresponding values of c-Si substrate. The effect is explained by an increase of the lifetime of photons in silicon nanowire structures.
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Original Russian Text © K.A. Gonchar, L.A. Golovan’, V.Yu. Timoshenko, V.A. Sivakov, S. Christiansen, 2010, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2010, Vol. 74, No. 12, pp. 1782–1784.
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Gonchar, K.A., Golovan’, L.A., Timoshenko, V.Y. et al. Effects of light localization in photoluminescence and Raman scattering in silicon nanostructures. Bull. Russ. Acad. Sci. Phys. 74, 1712–1714 (2010). https://doi.org/10.3103/S1062873810120208
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DOI: https://doi.org/10.3103/S1062873810120208