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Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs2 chalcopyrites: New materials for spintronics

Abstract

New diluted magnetic semiconductors (CdGeAs2:Mn, ZnGeAs2: Mn, and ZnSiAs2: Mn chalcopyrites) were synthesized. Magnetization M, electrical resistivity, magnetoresistance, and the Hall effect of these compositions were examined. Although the M(T) curves are complicated, they are similar in shape, for which the concentration and mobility of the charge bearers. Their Curie points are higher than 300 K, the highest in systems of the A II B IV C 2 V : Mn type.

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Author information

Correspondence to L. I. Koroleva.

Additional information

Original Russian Text © L.I. Koroleva, D.M. Zashchirinskii, T.M. Khapaeva, S.F. Marenkin, I.V. Fedorchenko, S.A. Varnavskii, R.A. Szymczak, B. Krzumanska, 2010, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2010, Vol. 74, No. 10, pp. 1409–1412.

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Koroleva, L.I., Zashchirinskii, D.M., Khapaeva, T.M. et al. Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs2 chalcopyrites: New materials for spintronics. Bull. Russ. Acad. Sci. Phys. 74, 1348–1351 (2010). https://doi.org/10.3103/S1062873810100059

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Keywords

  • Chalcopyrite
  • Dilute Magnetic Semiconductor
  • Current Carrier
  • Anomal Hall Effect
  • Good Electric Contact