• Proceedings of the XVIII St. Petersburg Readings on the Problems of Crystal Strength and Growth Dedicated to the Memory of A.V. Stepanov
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Sapphire hardness in different crystallographic directions

Abstract

The sapphire hardness in different crystallographic planes has been investigated in a wide range of indenter loads. It is shown that the sapphire microhardness is approximately the same for different crystallographic directions: 22–23 GPa. The resistance to the indenter penetration decreases with an increase in the load, especially strongly in the basal plane.

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Correspondence to A. B. Sinani.

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Original Russian Text © A.B. Sinani, N.K. Dynkin, L.A. Lytvinov, P.V. Konevsky, E.P. Andreev, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 10, pp. 1463–1465.

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Sinani, A.B., Dynkin, N.K., Lytvinov, L.A. et al. Sapphire hardness in different crystallographic directions. Bull. Russ. Acad. Sci. Phys. 73, 1380 (2009). https://doi.org/10.3103/S1062873809100177

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Keywords

  • Sapphire
  • Crystallographic Plane
  • Crystallographic Direction
  • Load Dependence
  • High Speed Impact