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Sapphire hardness in different crystallographic directions

  • A. B. SinaniEmail author
  • N. K. Dynkin
  • L. A. Lytvinov
  • P. V. Konevsky
  • E. P. Andreev
Proceedings of the XVIII St. Petersburg Readings on the Problems of Crystal Strength and Growth Dedicated to the Memory of A.V. Stepanov

Abstract

The sapphire hardness in different crystallographic planes has been investigated in a wide range of indenter loads. It is shown that the sapphire microhardness is approximately the same for different crystallographic directions: 22–23 GPa. The resistance to the indenter penetration decreases with an increase in the load, especially strongly in the basal plane.

Keywords

Sapphire Crystallographic Plane Crystallographic Direction Load Dependence High Speed Impact 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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Copyright information

© Allerton Press, Inc. 2009

Authors and Affiliations

  • A. B. Sinani
    • 1
    Email author
  • N. K. Dynkin
    • 1
  • L. A. Lytvinov
    • 2
  • P. V. Konevsky
    • 2
  • E. P. Andreev
    • 2
  1. 1.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Institute for Single CrystalsNational Academy of Sciences of UkraineKharkovUkraine

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