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High-pressure induced magnetoresistance in p-InAs:Mn and p-CdGeAs2:Mn

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The baric (P ≤ 5GPa) and magnetic-field (H ≤ 5 kOe) dependences of the transverse magnetore-sistance Δρ xx /ρ0 have been measured for p-InAs (R H = 22.5 cm3/C, ρ = 0.15 Ω cm) and the new ferromag-netic semiconductor p-CdGeAs2 (R H = 5 cm3/C, ρ = 0.62 Ω cm), doped with a magnetic impurity (Mn), near the temperature T = 297 K. The dependences Δρ xx /ρ0 (P, H) for p-InAs:Mn and p-CdGeAs2:Mn exhibit a magnetoresistive effect with an increase in pressure, and a pressure-induced magnetoresistance hysteresis is observed in p-CdGeAs2:Mn with a pressure drop.

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Authors and Affiliations

  1. Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, 367003, Russia

    A. Yu. Mollaev, I. K. Kamilov, R. K. Arslanov, T. R. Arslanov & U. Z. Zalibekov

  2. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, 119991, Russia

    V. M. Novotortsev & S. F. Marenkin

Authors
  1. A. Yu. Mollaev
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  2. I. K. Kamilov
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  3. R. K. Arslanov
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  4. T. R. Arslanov
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  5. U. Z. Zalibekov
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  6. V. M. Novotortsev
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  7. S. F. Marenkin
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Corresponding author

Correspondence to R. K. Arslanov.

Additional information

Original Russian Text © A.Yu. Mollaev, I.K. Kamilov, R.K. Arslanov, T.R. Arslanov, U.Z. Zalibekov, V.M. Novotortsev, S.F. Marenkin, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 7, pp. 1048–1050.

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Mollaev, A.Y., Kamilov, I.K., Arslanov, R.K. et al. High-pressure induced magnetoresistance in p-InAs:Mn and p-CdGeAs2:Mn. Bull. Russ. Acad. Sci. Phys. 73, 992–994 (2009). https://doi.org/10.3103/S1062873809070405

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  • DOI: https://doi.org/10.3103/S1062873809070405

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