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Heteroepitaxial III–V films on fianite substrates and buffer layers

  • Proceedings of the XXII Russian Conference on Electron Microscopy EM-2008
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

GaAs, GaSb, AlGaAs, and InGaAs epitaxial films and multilayer AlGaAs/InGaAs/GaAs heterostructures for PHEMT field-effect transistors have been obtained on fianite substrates by metal-organic vapour phase epitaxy. Films of different III–V compounds, including GaN, were grown on Si and GaAs substrates with a simple single buffer layer (fianite) and double buffer layer (fianite on porous Si and GaAs). It is established that the use of a two-layer buffer improves the structural quality and homogeneity of III–V films. A possibility of controlling the phase composition of GaN films using a corresponding buffer layer is shown. It is found that the use of a two-layer buffer increases the electrical homogeneity and decreases the electrical activity of defects in GaN films.

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Correspondence to Yu. N. Buzynin.

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Original Russian Text © Yu.N. Buzynin, M.N. Drozdov, A.N. Buzynin, V.V. Osiko, B.N. Zvonkov, Yu.N. Drozdov, A.E. Parafin, A.V. Murel, O.I. Khrykin, A.E. Luk’yanov, F.A. Luk’yanov, R.A. Sennov, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, vol. 73, No. 4, pp. 511–517.

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Buzynin, Y.N., Drozdov, M.N., Buzynin, A.N. et al. Heteroepitaxial III–V films on fianite substrates and buffer layers. Bull. Russ. Acad. Sci. Phys. 73, 485–490 (2009). https://doi.org/10.3103/S106287380904011X

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  • DOI: https://doi.org/10.3103/S106287380904011X

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