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Nonlinear nonequilibrium processes in a silicon switch of high-power microwave radiation

  • International Symposium “Nanophysics and Nanoelectronics-2008”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The nonlinear dynamic interaction of high-power microwave radiation with a high-purity compensated silicon sample, driven or not by a laser pulse initiating nonequilibrium photoconductivity, has been investigated numerically. It is shown that this effect can be used in semiconductor switches of the phase of electromagnetic waves in the presence of strong thermal self-action of microwaves.

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Authors and Affiliations

  1. Institute of Applied Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    G. G. Denisov, Vl. V. Kocharovsky & M. L. Kulygin

Authors
  1. G. G. Denisov
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  2. Vl. V. Kocharovsky
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  3. M. L. Kulygin
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Corresponding author

Correspondence to Vl. V. Kocharovsky.

Additional information

Original Russian Text © G.G. Denisov, Vl.V. Kocharovsky, M.L. Kulygin, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 1, pp. 98–102.

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Denisov, G.G., Kocharovsky, V.V. & Kulygin, M.L. Nonlinear nonequilibrium processes in a silicon switch of high-power microwave radiation. Bull. Russ. Acad. Sci. Phys. 73, 91–95 (2009). https://doi.org/10.3103/S1062873809010250

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  • DOI: https://doi.org/10.3103/S1062873809010250

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