Abstract
New complex buffer layers based on a porous material have been developed for epitaxial growth of GaN films on Si substrates. The characteristics of gallium nitride heteroepitaxial layers grown on silicon substrates with new buffer layers by metal-organic vapor phase epitaxy are investigated. It is shown that the porous buffer layers improve the electric homogeneity and increase the photoluminescence intensity of epitaxial GaN films on Si substrates to the values comparable with those for reference GaN films on Al2O3 substrates. It is found that a fianite layer in a complex buffer is a barrier for silicon diffusion from the substrate into a GaN film.
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Original Russian Text © Yu.N. Buzynin, Yu.N. Drozdov, M.N. Drozdov, A.Yu. Luk’yanov, O.I. Khrykin, A.N. Buzynin, A.E. Luk’yanov, E.I. Rau, F.A. Luk’yanov, 2008, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2008, Vol. 72, No. 11, pp. 1583–1587.
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Buzynin, Y.N., Drozdov, Y.N., Drozdov, M.N. et al. Heteroepitaxial GaN films on silicon substrates with porous buffer layers. Bull. Russ. Acad. Sci. Phys. 72, 1499–1503 (2008). https://doi.org/10.3103/S1062873808110129
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DOI: https://doi.org/10.3103/S1062873808110129