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New diluted ferromagnets based on diamond-like semiconductors GaSb, InSb, InAs, Ge, and Si, supersaturated with manganese or iron impurities during laser epitaxy

  • Proceedings of the XX International Jubilee School-Seminar “New Magnetic Materials of Microelectronics”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The electric, magnetic, and magneto-optical properties of thin (50–100 nm) GaSb:Mn, InSb:Mn, InAs:Mn, Ge:Mn, Ge:Fe, Si:Mn, and Si:Fe layers with a Curie point up to 500 K, obtained by laser plasma deposition in vacuum in the case of strong supersaturation of a solid solution with a 3d impurity, have been experimentally investigated.

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Authors and Affiliations

  1. Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    E. S. Demidov & D. M. Druzhnov

  2. Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603600, Russia

    V. V. Podol’skii, V. P. Lesnikov & Yu. A. Danilov

  3. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    Yu. A. Danilov & M. V. Sapozhnikov

  4. Institute of Chemistry of High-Purity Materials, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    A. I. Suchkov

Authors
  1. E. S. Demidov
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  2. V. V. Podol’skii
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  3. V. P. Lesnikov
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  4. Yu. A. Danilov
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  5. M. V. Sapozhnikov
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  6. A. I. Suchkov
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  7. D. M. Druzhnov
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Corresponding author

Correspondence to E. S. Demidov.

Additional information

Original Russian Text © E.S. Demidov, V.V. Podol’skii, V.P. Lesnikov, Yu.A. Danilov, M.V. Sapozhnikov, A.I. Suchkov, D.M. Druzhnov, 2007, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2007, Vol. 71, No. 11, pp. 1621–1622.

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Demidov, E.S., Podol’skii, V.V., Lesnikov, V.P. et al. New diluted ferromagnets based on diamond-like semiconductors GaSb, InSb, InAs, Ge, and Si, supersaturated with manganese or iron impurities during laser epitaxy. Bull. Russ. Acad. Sci. Phys. 71, 1578–1580 (2007). https://doi.org/10.3103/S1062873807110329

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  • DOI: https://doi.org/10.3103/S1062873807110329

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