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Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes

  • Proceedings of the XXXIV Conference on Low-Temperature Physics “NT-34”
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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The temperature dependence of the forward current in heavily doped silicon p-n diodes has been measured at low temperatures, at which conduction occurs via tunneling. In the lowest temperature region, variable range hopping conduction was observed, whereas at higher temperatures the diode current exhibited a superexponential temperature dependence, which can be explained by thermotunneling through some random potential barriers.

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Authors and Affiliations

  1. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine

    V. L. Borblik, Yu. M. Shwarts & M. M. Shwarts

Authors
  1. V. L. Borblik
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  2. Yu. M. Shwarts
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  3. M. M. Shwarts
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Correspondence to V. L. Borblik.

Additional information

Original Russian Text © V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts, 2007, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2007, Vol. 71, No. 8, pp. 1108–1110.

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Borblik, V.L., Shwarts, Y.M. & Shwarts, M.M. Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes. Bull. Russ. Acad. Sci. Phys. 71, 1073–1075 (2007). https://doi.org/10.3103/S1062873807080059

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  • DOI: https://doi.org/10.3103/S1062873807080059

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