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Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes

  • V. L. BorblikEmail author
  • Yu. M. Shwarts
  • M. M. Shwarts
Proceedings of the XXXIV Conference on Low-Temperature Physics “NT-34”

Abstract

The temperature dependence of the forward current in heavily doped silicon p-n diodes has been measured at low temperatures, at which conduction occurs via tunneling. In the lowest temperature region, variable range hopping conduction was observed, whereas at higher temperatures the diode current exhibited a superexponential temperature dependence, which can be explained by thermotunneling through some random potential barriers.

Keywords

Doping Level Localization Length Tunneling Probability Metallic Conductivity Ature Dependence 
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Copyright information

© Allerton Press, Inc. 2007

Authors and Affiliations

  • V. L. Borblik
    • 1
    Email author
  • Yu. M. Shwarts
    • 1
  • M. M. Shwarts
    • 1
  1. 1.Lashkarev Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKievUkraine

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