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Terahertz negative conductivity of heterostructure barriers during ballistic transport of hot electrons

  • Proceedings of the International Symposium “Nanophysics and Nanoelectronics 2006”
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A mechanism for achieving the terahertz negative conductivity on transmit time effects during ballistic transport of hot carriers in nanoscale semiconductor heterostructures was theoretically considered. It was shown that selection of the heterostructure potential profile can significantly increase high-frequency negative conductivity.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    V. A. Kozlov, V. A. Verbus & A. V. Nikolaev

Authors
  1. V. A. Kozlov
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  2. V. A. Verbus
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  3. A. V. Nikolaev
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Additional information

Original Russian Text © V.A. Kozlov, V.A. Verbus, A.V. Nikolaev, 2007, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2007, Vol. 71, No. 1, pp. 114–117.

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Kozlov, V.A., Verbus, V.A. & Nikolaev, A.V. Terahertz negative conductivity of heterostructure barriers during ballistic transport of hot electrons. Bull. Russ. Acad. Sci. Phys. 71, 109–112 (2007). https://doi.org/10.3103/S1062873807010285

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  • DOI: https://doi.org/10.3103/S1062873807010285

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