Abstract
Anisotropic ordered structures of silicon and silicon carbide were prepared by chemical vapor deposition (CVD) technique using dichlorosilane (DCS), CCl4, and CF2Cl5 and nitrogen gas as the components of starting gaseous mixtures. It has been shown that nitrogen molecules react at the active sites of substrate surface formed upon its etching with the 7.5% DCS + 7.5% CCl4 + 85% N2 gaseous mixture.
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Ma, T., Chen, K., Du, J., Hu, J., and Li, W., Blue Light Emission from Hydrogenated Amorphous Silicon Carbide Prepared by Xylene Source in Plasma-Enhanced Chemical Vapor Deposition System, Chin. Phys. Lett., 1996, vol. 13, no. 12, pp. 947–956.
Zolotukhin, I.V., Kalinina, Yu.E., Sitnikov, A.V., and Ushakova F.E., Methods for Synthesis of Ordered Carbon Nanotubes and Nanofibers by Chemical Vapor Deposition, Al’tern. Energiya Ekologiya, 2006, vol. 10, no.42, pp. 46–51.
Nebol’sin, V.A. and Shchetinin, A.A., Role of Surface Energy in the Vapor-Liquid-Solid Growth of Silicon, Inorg. Mater., 2003, vol. 39, no. 9, pp. 899–903.
Nebol’sin, V.A. and Shchetinin, A.A., A Mechanism of Quasi-One-Dimensional Vapor Phase Growth of Si and GaP Whiskers, Inorg. Mater., 2008, vol. 44, no. 10, pp. 1033–1040.
Sugano, T., Ikoma, T., and Takeisi, E., Introduction into Microelectronics, Tokyo: Iwanami Shoten Publishers, 1985.
Dan’ko, V.A., Indutny, I.Z., Lysenko, V.S., Maidanchuk, I.Yu., Min’ko, V.I., Nazarov, A.N., Tkachenko, A.S., and Shepelyavy, P.I., Kinetics of Phase-Structure Transitions in Thin SiOx Films in the Process of Rapid Thermal Annealing, Fiz. Tekh. Poluprovodn., 2005, vol. 39, no. 10, pp. 1239–1245.
Fainer, N.I., Kosinova, M.L., Rumyantsev, Yu.M., and Kuznetsov, F.A., Physical and Chemical Properties of Nanocrystalline Films of Silicon Carbonitride, Zh. Strukt. Khim., 2004, vol. 45, pp. 66–71.
Deng, S.Z., Wu, Z.S., Chen, J., She, J.C., and Xu, N.S., Silicon Carbide Nanotrees: Synthesis and Field Electron Emission Properties, Appl. Phys. Lett., 1999, vol. 277, no. 11, pp. 1287–1284.
Silenko, P.M., Shlapak, A.N., Tomila, T.V., Bykov, A.I., Kuz’menko, L.N., Okun’, I.Yu., and Ragulya, A.V., Fe-Catalyzed Synthesis of SiC Nanofibers from Methyltrichlorosilane, Inorg, Mater., 2008, vol. 44, no. 4, pp. 395–400.
Wolf, E.L., Nanophysics and Nanotechnology: An Introduction to Modern Concepts in Nanoscience, New York: Wiley, 2004.
Azatyan, V.V., Rubtsov, N.M., Ryzhkov, O.T., and Temchin, S.M., Kinetic Peculiarities of Chemical Ionization in Rarefied Silane-Oxygen and Dichlorosilane-Oxygen Flames at Near Room Temperature and Low Pressures, Kinet Catal., 1996, vol. 37, no. 6, 754–759.
Barin, I., Thermochemical Data of Pure Substances, Parts I, II, Berlin: VCH, 1989.
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Rubtsov, N.M., Seplyarskii, B.S. & Tsvetkov, G.I. Anisotropic ordered structures of silicon and silicon carbide by chemical vapor deposition. Int. J Self-Propag. High-Temp. Synth. 19, 186–190 (2010). https://doi.org/10.3103/S1061386210030040
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DOI: https://doi.org/10.3103/S1061386210030040