Technological Fabrication Features of Microwave Device with Schottky Barriers
At present, research and development of heterojunctions are conducted in the directions of searching for new compositions and technological regimes for the creation of ohmic and barrier transitions for gallium arsenide. The transition to silver-based metallization, which has large thermal and electrical conductivity comparing with gold and a relatively low diffusion coefficient to gallium arsenide, should improve the technical characteristics of the devices. One of the most important technological operations in the formation of Schottky ohmic contacts and barriers is thermal annealing. Silver to gallium arsenide contacts are made in vacuum by the method of thermal evaporation. The deposition and thermal treatment regimes for creating ohmic contacts of Ag–Ge–In/n–n+ GaAs with specific contact resistance ρc = (5...7)+10–5 Ω.cm2 are developed. The influence of the substrate temperature during the silver deposition and the annealing temperature on the height of the Schottky barrier Ag/n–n+ GaAs, the injection coefficient γ and the nonideality factor η is established.
Unable to display preview. Download preview PDF.
- 1.A. I. Belous, V. A. Solodukha, S. V. Shvedov, Space Electronics, 2nd book [in Russian] (Tekhnosfera, Moscow, 2015).Google Scholar
- 2.E. Ya. Shvets, A. G. Kolomoets, “Estimation of prospects of application of GaAs and alloys on his basis as materials for sun elements,” Metallurgy, No. 30, 132 (2013). URI: http://www.zgia.zp.ua/gazeta/Metallurgy_30_132.pdf.Google Scholar
- 3.M. V. Zagirniak, A. P. Oksanich, V. R. Petrenko, S. E. Pritchin, V. A. Terban, “Development of modern technologies for growing structurally perfect ingots of electronic gallium arsenide,” Proc. of 5th Int. Sci. Conf. on Functional Base of Nanoelectronics, Katsiveli (NURE, Kharkiv, 2012), pp. 5–13.Google Scholar
- 6.S. V. Platonov, N. V. Permyakov, B. I. Seleznev, V. A. Moshnikov, E. Yu. Kozlovskiy, A. M. Osipov, “Low-noise gallium-arsenide amplifiers under the influence of electromagnetic interferences of increased intensity,” Bulletin of Novgorod State University, No. 67, 29 (2012). URI: http://www.novsu.ru/file/1010219.Google Scholar
- 7.E. V. Erofeev, “Formation of metal-semiconductor contacts with metallization on the basis of Al and Cu for GaAs microwave transistors with high electron mobility,” PhD thesis, specialization: 01.04.04 Physical electronics. (Tomsk, 2012). URI: http://old.tusur.ru/export/sites/ru.tusur.new/ru/science/education/diss/2012/03/01.pdf.Google Scholar
- 8.G. I. Koltsov, S. I. Didenko, A. V. Chernykh, S. V. Chernykh, A. P. Chubenko, Yu. N. Sveshnikov, “Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X-or-ray photons,” Semiconductors 46, No. 8, 1066 (2012). DOI: 10.1134/S106378261208009X.CrossRefGoogle Scholar
- 10.P. Jayavel, J. Kumar, P. Ramasamy, R. Premanand, “On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs,” Indian J. Eng. Materials Sci. 7, No. 5-6, 340 (2000). URI: http://nopr.niscair.res.in/handle/123456789/24425.Google Scholar
- 11.V. S. Dmitriev, E. Ya. Shvets, “Technological features of manufacturing a traveling wave amplifier,” Proc. of 10th Int. Youth Sci. Conf. on Modern Problems of Radio Engineering and Telecommunications, RT-2014, Sevastopol (SevNTU, 2014). p. 158. ISBN 978-617-612-072.Google Scholar
- 22.V. S. Dmitriev, E. Ya. Shvets, L. B. Dmitrieva, “Technological feature of fabrication of contact to GaAs,” Scientific Bulletin of KUEITM ‘New Technologies’, No. 1-2, 48 (2013).Google Scholar
- 25.V. Ya. Niskov, “Measurement of transient resistance of ohmic contacts to thin layers of semiconductors,” Instrum. Exp. Tech., No. 1, 235 (1971).Google Scholar
- 26.V. Ya. Niskov, V. V. Zadde, A. K. Zaitseva, V. I. Streltsova, “Measurement of transient resistance of contacts on thin layers of semiconductor,” Instrum. Exp. Tech., No. 2, 240 (1971).Google Scholar
- 27.V. Ya. Niskov, G. A. Kubetskiy, “Ohmic contacts resistance to a thin semiconductor layers,” Semiconductors 4, No. 9, 1806 (1970).Google Scholar