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Comparison of obtain of phase photo-response images in case of scanning of semiconductor heterostructures in p-n junction perpendicular plane

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Abstract

It is carried out comparative analysis of the methods of research of photo-electric response on example of scanning of semiconductor structure of laser diode on a basis of AlGaInP in direction, which is perpendicular to p-n junction plane. We discovered and theoretically proved a difference in results obtained by means of phase and differential-phase research methods. It is shown differential-phase research method allows to obtain addition information about optical properties which are not present in results, obtained by phase method.

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Authors and Affiliations

  1. Taras Shevchenko National University of Kyiv, Kyiv, Ukraine

    S. A. Kolenov

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  1. S. A. Kolenov
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Correspondence to S. A. Kolenov.

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Original Russian Text © S.A. Kolenov, 2015, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2015, Vol. 58, No. 4, pp. 50–58.

ORCID: 0000-0001-5408-1983

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Kolenov, S.A. Comparison of obtain of phase photo-response images in case of scanning of semiconductor heterostructures in p-n junction perpendicular plane. Radioelectron.Commun.Syst. 58, 181–186 (2015). https://doi.org/10.3103/S0735272715040068

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  • DOI: https://doi.org/10.3103/S0735272715040068

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