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Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences

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Abstract

In this paper it is considered an influence of gamma-radiation 60Co, microwave and ultrasonic processing on electro-physical properties and relaxation of internal stresses in Au-Ti(W, Cr, TiB x )-GaAs contacts, based on GaAs plate, containing n-n + structures of GaAs. Correlation between radius of curvature of GaAs plates and contact parameters is detected. It is shown experimentally, that modification of electro-physical parameters of diodes with Schottky barrier, based on GaAs is specified by internal stresses relaxation in gallium arsenide structures with contacts.

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Authors and Affiliations

  1. Combined Institute of Natural Sciences of the Karakalpak Branch of the Academy of Sciences of the Republic of Uzbekistan, Nukus, Uzbekistan

    A. B. Kamalov

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  1. A. B. Kamalov
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Original Russian Text © A.B. Kamalov, 2009, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2009, Vol. 52, No. 3, pp. 71–77.

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Kamalov, A.B. Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences. Radioelectron.Commun.Syst. 52, 160–164 (2009). https://doi.org/10.3103/S073527270903008X

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  • DOI: https://doi.org/10.3103/S073527270903008X

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