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A Method for Reconstructing the Potential Profile of Surfaces Coated with a Dielectric Layer

  • RADIOPHYSICS, ELECTRONICS, ACOUSTICS
  • Published:
Moscow University Physics Bulletin Aims and scope

Abstract

We propose a method of signal amplification for the scanning probe microscope mode, in which the distribution of the surface potential of a sample is measured simultaneously with topography using a local probe based on a field-effect transistor with a nanowire channel. The application of a method is especially relevant in the study of the electric potential of the surface in the case when it is covered with a dielectric layer that strongly weakens the electric field of the detected electric charges. A key feature of the method is in additional coating the surface of the dielectric layer with thin film of chromium (\(R_{\textrm{square}}>10\) k\(\Omega\); a film thickness is \({\sim}7\) nm). This film consists of small conductive granules separated by tunnel barriers. It was experimentally shown on the fabricated test structures that a signal attenuated by a dielectric layer can be restored by \(70{-}80\%\). We estimated the sensitivity of transistors integrated into the probe of a scanning probe microscope in the range of \(2{-}5\) mV in single frequency band at a frequency of \(100\) Hz.

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ACKNOWLEDGMENTS

Bozev I. V. thanks the BASIS Foundation for the Advancement of Theoretical Physics and Mathematics.

Funding

This work was supported by the Russian Science Foundation (project no. 16-12-00072).

Author information

Authors and Affiliations

  1. MSU QUANTUM TECHNOLOGY CENTRE, 119991, Moscow, Russia

    I. V. Bozhev, A. S. Trifonov, D. E. Presnov, S. A. Dagesyan, A. A. Dorofeev, I. I. Tsiniaikin & V. A. Krupenin

  2. Faculty of Physics, Lomonosov Moscow State University, 119991, Moscow, Russia

    I. V. Bozhev, A. S. Trifonov, D. E. Presnov, S. A. Dagesyan, A. A. Dorofeev, I. I. Tsiniaikin & V. A. Krupenin

  3. Kotel’nikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences, 125009, Moscow, Russia

    A. S. Trifonov

  4. Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991, Moscow, Russia

    D. E. Presnov

  5. Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, 119991, Moscow, Russia

    D. E. Presnov

Authors
  1. I. V. Bozhev
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  2. A. S. Trifonov
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  3. D. E. Presnov
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  4. S. A. Dagesyan
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  5. A. A. Dorofeev
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  6. I. I. Tsiniaikin
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  7. V. A. Krupenin
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Corresponding authors

Correspondence to I. V. Bozhev or A. S. Trifonov.

Additional information

Translated by I. P Obrezanova

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Bozhev, I.V., Trifonov, A.S., Presnov, D.E. et al. A Method for Reconstructing the Potential Profile of Surfaces Coated with a Dielectric Layer. Moscow Univ. Phys. 75, 70–75 (2020). https://doi.org/10.3103/S0027134920010063

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