Moscow University Physics Bulletin

, Volume 72, Issue 6, pp 558–562 | Cite as

The Validity of the Results of High-Performance Modeling of SiO2 Film Growth

  • V. G. Zhupanov
  • F. V. Grigoriev
  • V. B. Sulimov
  • A. V. Tikhonravov
Condensed Matter Physics

Abstract

This work is devoted to checking of the validity of the results of high-performance modeling of SiO2 film growth. Modeling of the high-energy deposition process shows that the refractive indices of deposited SiO2 films exceed the refractive index of a fused silica substrate. This is entirely supported by the analysis of spectrophotometric data obtained for practical thin films deposited using the respective deposition technique.

Keywords

high-performance simulation molecular dynamic thin film growth deposition process silicon dioxide 

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Copyright information

© Allerton Press, Inc. 2017

Authors and Affiliations

  • V. G. Zhupanov
    • 1
  • F. V. Grigoriev
    • 2
  • V. B. Sulimov
    • 2
  • A. V. Tikhonravov
    • 2
  1. 1.Luch Research and Production AssociationPodol’sk, Moscow oblastRussia
  2. 2.Research Computing CenterMoscow State UniversityMoscowRussia

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