Abstract
The effect of incidence angle on the electrical parameters of vertical parallel silicon solar cell under frequency domain was theoretically analyzed. Based on the diffusion-recombination equation, the expression of excess minority carrier density in the base was established according to the modulation frequency and the illumination incidence angle. The excess minority carrier density, the photocurrent density, the photo voltage, series resistance, shunt resistance, electric power and the space charge region capacitance were calculated and plotted. The objective of this work was to show the effects of solar cell modulation frequency and the illumination incidence angle on these electrical parameters, electric power and space charge region capacitance. Plots of solar cell’s electric power with the junction recombination velocity gave the maximum solar cell’s electric power; Pm. Influence of various parameters of incidence angles on the solar cell’s electric power was also studied.
Similar content being viewed by others
References
A. Baskys, M. Sapurov, and R. Zubavicius, Elektron. Elektrotech. 19 (2), 45 (2013).
S. Kumar Behura, P. Mahala, and A. Ray, J. Electron Devices 10, 471 (2011).
Y. Yue, J. J. Liou, and A. Ortiz-Conde, J. Appl. Phys. 77, 1611 (1995).
D. L. Meier, J.-M. Hwang, and R. B. Campbell, IEEE Trans. Electron Devices 35, 70 (1988).
L. J. Geerligs and D. Macdonald, Prog. Photovoltaics: Res. Appl. 12, 309 (2004). doi 10.1002/pip.546
D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, 3rd ed. (McGraw-Hill, 2003)
D.-K. Kim, Y.-J. Oh, S.-H. Kim, K.-J. Hong, Y.-Y. Jung, H.-J. Kim, and M.-S. Jeon, Trans. Electr. Electron. Mater. 14 (4), 177 (2013).
R. Anil Kumar, M. S. Suresh, and J. Nagaraju, IEEE Trans. Power Electron. 21, 543 (2006).
A. Edler, M. Schlemmer, J. Ranzmeyer, and R. Harney, Energy Procedia 27, 267 (2012).
T. Roth, D. Wichmann, K. Meyer, and M. Orlob, Energy Procedia 8, 82 (2011).
G. Sahin, Results Phys. 6, 107 (2016).
M. M. Dione, S. Mbodji, M. L. Samb, M. Dieng, M. Thiame, S. Ndoye, F. I. Barro, and G. Sissoko, in Proc. 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 2009, p. 465.
M. L. Samb, M. Dieng, S. Mbodji, B. Mbow, N. Thiam, F. I. Barro, and G. Sissoko, in Proc. 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 2009, p. 469.
H. Ly Diallo, B. Dieng, I. Ly, M.M. Dione, M. Ndiaye, O.H. Lemrabott, Z.N. Bako, A. Wereme, and G. Sissoko, Res. J. Appl. Sci., Eng. Technol. 4, 2626 (2012).
J. W. Orton and P. Blood, The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Academic Press, London, 1990).
H. Y. Ba, B. Seibou, I. Gaye, I. Ly, and G. Sissoko, Curr. Trends Technol. Sci. 3, 411 (2014).
G. Sahin, D. Moustapha, A. O. E. M. Mohamed, I. N. Moussa, T. Amary, and S. Gregoire, J. Appl. Math. Phys. 3, 1536 (2015).
N. Honma and C. Munakata, Jpn. J. Appl. Phys. 26, 2033 (1987).
N. Honma, C. Munakata, and H. Shimizu, Jpn. J. Appl. Phys. 27, 1322 (1988).
A. Mandelis, J. Appl. Phys. 66, 5572 (1989).
A. Dieng, I. Zerbo, M. Wade, A. S. Maiga, and G. Sissoko, Semicond. Sci. Technol. 26, 095023 (2011).
H. L. Diallo, A. Wereme, A. S. Maiga, and G. Sissoko, Eur. Phys. J. Appl. Phys. 42, 203 (2008).
E. H. Ndiaye, G. Sahin, D. Moustapha, T. Amary, L. D. Hawa, N. Mor, and S. Gregoire, J. Appl. Math. Phys. 3, 1522 (2015).
A. Gover and P. Stella, IEEE Trans. Electron Devices 21, 351 (1974).
M. Sane, M. Zoungrana, H. Ly Diallo, G. Sahin, N. Thiam, M. Ndiaye, M. Dieng, and G. Sissoko, Int. J. Invent. Eng. Sci. 1 (11), 37 (2013).
J. L. Balenzategui and F. Chenlo, Sol. Energy Mater. Sol. Cells 86, 53 (2005).
D. Pysch, A. Mette, and S. W. Glunz, Sol. Energy Mater. Sol. Cells 91, 1698 (2007).
M. K. El-Adawi and I. A. Al-Nuaim, Vacuum 64, 33 (2002).
S. R. Wenham, M. A. Green, M. E. Watt, and R. Corkish, Applied Photovoltaics, 2nd ed. (Routledge, 2007).
M. Bashahu and A. Habyarimana, Renewable Energy 6, 127 (1995).
D. Pysch, A. Mette, and S. W. Glunz, Sol. Energy Mater. Sol. Cells 91, 1698 (2007).
M. K. El-Adawi and I. A. Al-Nuaim, Vacuum 64, 33 (2002).
F. I. Barro, M. Sane, and B. Zouma, Turk. J. Phys. 39, 122 (2015). doi 10.3906/fiz-1408-3
M. Sane, G. Sahin, F. I. Barro, and A. S. Maiga, Turk. J. Phys. 38, 221 (2014). doi 10.3906/fiz-1311-9
S. Sharma, A. Tahir, K. S. Reddy, and T. K. Mallick, Sol. Energy Mater. Sol. Cells 149, 29 (2016).
S. Cate, C. S. S. Sandeep, Y. Liu, M. Law, S. Kinge, A. J. Houtepen, J. M. Schins, and L. D. A. Siebbeles, Acc. Chem. Res. 48, 174 (2015).
G. Itskos, A. Othonos, T. Rauch, S. F. Tedde, O. Hayden, M. V. Kovalenko, W. Heiss, and S. A. Choulis, Adv. Energy Mater. 1, 802 (2011).
Author information
Authors and Affiliations
Corresponding author
Additional information
The article is published in the original.
About this article
Cite this article
Şahin, G. Effect of incidence angle on the electrical parameters of vertical parallel junction silicon solar cell under frequency domain. Moscow Univ. Phys. 71, 498–507 (2016). https://doi.org/10.3103/S0027134916050088
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S0027134916050088