The paper investigates and analyzes the current–voltage characteristics of the CdO-CdTe-Mo heterostructure, which is photosensitive to visible and near infrared electromagnetic radiation, in a wide range of solar radiation illumination power with an AM1.5 spectrum. The effect of internal injection amplification of the primary photocurrent in the forward direction of the applied voltage to the heterostructure is established. This effect is explained in terms of the positive feedback mechanism when the resistance of the photosensitive region of the structure is modulated by injected charge carriers and the external applied bias voltage is redistributed between the p–n junction and the base region. The photosensitivity of the CdO-CdTe-Mo heterostructure, in the charge carrier injection mode, increases with an increase in the applied bias voltage and a decrease in the power of the incident solar radiation. This is explained by the effective modulation of the base of the structure by the injected charge carriers at low radiation powers.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Price excludes VAT (USA)
Tax calculation will be finalised during checkout.
Shockley, W. and Queisser, H.J., Detailed balance limit of efficiency of p–n junction solar cells, J. Appl. Phys., 1961, vol. 32, p. 510.
Green, M.A., Solar cell efficiency tables (Version 60), Prog. Photovoltaics Res. Appl., 2022, vol. 30, pp. 687–701. https://doi.org/10.1002/pip.3595
Usmonov, Sh.N., Mirsagatov, Sh.A., and Leyderman, A.Yu., Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature, Semiconductors, 2010, vol. 44, no. 3, pp. 313–317.
Mirsagatov, Sh.A., Kabulov, R.R., and Makhmudov, M.A., Injection photodiode based on an n-CdS/p-CdTe heterostructure, Semiconductors, 2013, vol. 47, no. 6, pp. 825–830. https://doi.org/10.1134/S106378261306016X
Kabulov, R.R., Makhmudov, M.A., Ataboev, O.K., et al., The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures, Appl. Sol. Energy, 2016, vol. 52, pp. 61–67. https://doi.org/10.3103/S0003701X16010047
Brus, V.V., Ilashchuk, M.I., Khomyak, V.V., Kovalyuk, Z.D., Maryanchuk, P.D., and Ulyanitsky, K.S., Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe, Semiconductors, 2012, vol. 46, no. 9, pp. 1152–1157.
Brus, V.V., Ilashchuk, M.I., Kovalyuk, Z.D., Maryanchuk, P.D., Ulyanitsky, K.S., and Gritsyuk, B.N., Mechanisms of charge transport in anisotype n‑TiO2/p-CdTe heterojunctions, Semiconductors, 2011, vol. 45, no. 8, pp. 1077–1081.
Kabulov, R.R., The effect of the buffer layer material on the photosensitivity spectrum of heterostructures based on CdTe, Sci. J. Semicond. Phys. Microelectr., 2019, vol. 1, no. 3, pp. 56–61. https://uzjournals.edu.uz/semiconductors/vol1/iss3/8.
Naoyuki Ueda, Hiroo Maeda, Hideo Hosono, and Hiroshi Kawazoe, Band-gap widening of CdO thin films, J. Appl. Phys., 1998, vol. 84, no. 11, p. 6174.
Mirsagatov, S.A., Ataboev, O.K., and Makhmudov, M.A., Current sensitivity and efficiency of a CdO-pCdTe-Mo structure at low light levels, Appl. Sol. Energy, 2011, vol. 47, pp. 243–247. https://doi.org/10.3103/S0003701X11030121
Chopra, K. and Das, S., Thin Film Solar Cells, New York: Plenum Press, 1983.
Muzafarova, S.A., Mirsagatov, Sh.A., and Janabergenov, J., Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions, Phys. Solid State, 2007, vol. 49, no. 6, pp. 1168–1174.
Janabergenov, J., Mirsagatov, Sh.A., and Karazhanov, S.Zh., A p-i-n model of CdTe/CdS heterostructures, Inorg. Mater., 2005, vol. 41, no. 8, pp. 800–802.
Mirsagatov, Sh.A., Uteniyazov, A.K., and Achilov, A.S., Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films, Phys. Solid State, 2012, vol. 54, no. 9, pp. 1751–1763.
Advanced Characterization Techniques for Thin Solar Cells, Abou-Ras, D., Kirchartz, T., and Rau, U., Eds., Weinheim, Germany: Wiley-VCH, 2011, p. 564.
Sze, S.M. and Kwok, K.Ng., Physics of Semiconductor Devices, Hoboken, NJ: Wiley-Interscience, 2007, 3rd ed., p. 823.
Stafeev, V.I., The influence of the resistance of the thickness of the semiconductor on the form of the current-voltage characteristic of the diode, Zh. Tekh. Fiz., 1958, vol. 28, no. 9, p. 1631.
Leiderman, A.Yu. and Minbaeva, M.K., A mechanism of rapid growth of direct current in semiconductor diode structures, Semiconductors, 1996, vol. 30, no. 10, pp. 1729–1738.
Leiderman, A.Yu. and Karageorgy-Alkalaev, P.M., On the theory of sublinear current-voltage characteristics of semiconductor structures, Solid State Commun., 1978, vol. 27, p. 339.
Vikulin, I.M., Kurmashov, Sh.D., and Stafeev, V.I., Injection-based photodetectors, Semiconductors, 2008, vol. 42, no. 1, pp. 112–127.
Lampert, A.M. and Mark, P., Current Injection in Solids, New York: Academic Press, 1970, p. 416.
Mirsagatov, Sh.A., Ataboev, O.K., Zaveryukhin, B.N., and Nazarov, Zh.T., Photoelectric properties of an injection photodetector based on alloys of II–VI compounds, Semiconductors, 2014, vol. 48, no. 3, pp. 354–359.
Kobulov, R.R., Makhmudov, M.A., Gerasimenko, S.Y., et al., Morphology and current transport in a thin-film polycrystalline Au–ZnxCd1–xS–Mo structure with wide photosensitivity range in the ultraviolet and visible radiation spectral region, Appl. Sol. Energy, 2018, vol. 54, pp. 251–254. https://doi.org/10.3103/S0003701X18040084
Sze, S., Physics of Semiconductor Devices, New York: Wiley, 1969.
Mirsagatov, Sh.A., Leiderman, A.Yu., and Ataboev, O.K., Mechanism of charge transfer in injection photodiodes based on the In−n +-CdS−n-CdSxTe1 − x-p-ZnxCd1 − xTe-Mo structure, Phys. Solid State, 2013, vol. 55, no. 8, pp. 1635–1646.
Sapaev, I.B., Mirsagatov, Sh.A., Sapaev, B., and Kabulov, R.R., The mechanism of photocurrent amplification in injection photodiodes based on a photosensitive polycrystalline CdS film, Fiz. Inzh. Poverkh., 2015, vol. 13, no. 2, pp. 128–135.
The authors are grateful to the employees of the Department of Semiconductors, Physical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, as well as the staff of the National Research Institute of Renewable Energy Sources under the Ministry of Energy of the Republic of Uzbekistan for their help in the process of researching photodetectors, as well as advice in discussing the results of scientific research.
The study was carried out under the basic funding program for fundamental research of the Physical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan.
Translated by M. Chubarova
About this article
Cite this article
Kabulov, R.R., Gerasimenko, S.Y. & Akbarov, F.A. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride. Appl. Sol. Energy 59, 118–124 (2023). https://doi.org/10.3103/S0003701X22601065