Abstract
The results of an experimental study of the formation of recombination radiation-defect sites in n+–p silicon structures during irradiation with high-energy electrons have been presented. It has been shown that zinc doping into p-Si to a number density comparable to boron does not change the lifetime of minority charge carriers (τ). It has been found that an increase in the zinc number density to 6 × 1014 cm–3 in doped n+–p structures leads to a decrease in the radiation damage coefficients of τ by a factor more than 3. A mechanism explaining the effect of Zn impurities on the process of radiation defect formation in silicon structures has been proposed.
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ACKNOWLEDGMENTS
The authors thank the team of the unique scientific object “Electronics” U 003 for helping with irradiating the samples.
Funding
This study has been carried out with funding from a research program from the Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan for 2020–2024.
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Tashmetov, M.Y., Makhkamov, S., Sattiev, A.R. et al. Efficiency of Injecting Radiation Defects during Irradiation of Silicon n+–p Structures with Fast Electrons. Appl. Sol. Energy 57, 188–191 (2021). https://doi.org/10.3103/S0003701X21030099
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DOI: https://doi.org/10.3103/S0003701X21030099