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Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

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Abstract—

Technology has been developed for generating a vapor phase in a separate evaporator at a temperature of 80–120°C by dropping a mixture in a quasi-closed reactor with the help of chemical vapor deposition (CVD). Tin oxide (SnO2) layers were grown on the surface of single-crystal p-Si by chemical vaporization epitaxy and formed a microcrystalline structure on the substrate surface at a temperature of 170–500°C. The study of the spectral dependence of the photosensitivity of the n-SnO2/p-Si heterostructure with an aluminum back contact showed that the inversion of photocurrent photosensitivity occurred associated with the formation of an inbuilt electric field that was generated at the boundary of the frontal electric contact between Al and p-Si and counter connected to the main potential barrier of the n-SnO2/p-Si heterojunction.

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Funding

This work was financially supported by the Ministry of Innovation Development of the Republic of Uzbekistan as part of fundamental project FA-FA-F-2-005.

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Authors and Affiliations

  1. Physical–Technical Institute of SPA Physics–Sun, Uzbekistan Academy of Sciences, 100084, Tashkent, Uzbekistan

    M. U. Khazhiev, R. R. Kabulov, A. G. Gulyamov & Kh. N. Juraev

  2. Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, Urgench Branch, 220100, Urgench, Uzbekistan

    D. S. Saidov

Authors
  1. M. U. Khazhiev
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  2. R. R. Kabulov
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  3. A. G. Gulyamov
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  4. Kh. N. Juraev
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  5. D. S. Saidov
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Correspondence to M. U. Khazhiev.

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Translated by S. Kuznetsov

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Khazhiev, M.U., Kabulov, R.R., Gulyamov, A.G. et al. Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods. Appl. Sol. Energy 57, 30–33 (2021). https://doi.org/10.3103/S0003701X21010114

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