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Photosensors Based on Neutron Doped Silicon

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Abstract

The problem of preparing a compensated material is solved by the radiation technology method (by irradiating the silicon single-crystal with fast neutrons), which makes it possible to intentionally change the photoelectric parameters of silicon. The changes in the photoelectric parameters of the compensated samples are monitored by measuring the Rd/Rl ratio, and the possibility of creating photo and thermal sensors with identical characteristics, operating within the temperature range of 30 to 100°C, is shown.

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Funding

This work was performed within the project FA-Atekh–2018-176 “Development of the Radiation-Technological Method of Doping Silicon Single-Crystal Films with Sulfur Impurity.”

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Authors and Affiliations

  1. Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, Uzbekistan

    M. Yu. Tashmetov, Sh. A. Makhmudov, A. A. Sulaymonov, A. K. Rafikov & B. Zh. Abdurayimov

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  1. M. Yu. Tashmetov
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  2. Sh. A. Makhmudov
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  3. A. A. Sulaymonov
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  4. A. K. Rafikov
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  5. B. Zh. Abdurayimov
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Corresponding author

Correspondence to M. Yu. Tashmetov.

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Translated by M. Samokhina

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Tashmetov, M.Y., Makhmudov, S.A., Sulaymonov, A.A. et al. Photosensors Based on Neutron Doped Silicon. Appl. Sol. Energy 55, 71–73 (2019). https://doi.org/10.3103/S0003701X19010134

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  • DOI: https://doi.org/10.3103/S0003701X19010134

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