Abstract
The results of the studies of n-InP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide band-gap and radiation resistance. It has been determined that, at a temperature of T > 50°C, this structure generates current (up to 0.15 μA) and voltage (up to 11 mV); this is caused by the thermally stimulated formation of vacancies.
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Original Russian Text © A.Yu. Leiderman, A.S. Saidov, M.M. Khashaev, U.Kh. Rakhmonov, 2014, published in Geliotekhnika, 2014, No. 3, pp. 23–26.
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Leiderman, A.Y., Saidov, A.S., Khashaev, M.M. et al. Study of properties of tellurium-doped indium phosphide as photoconversion material. Appl. Sol. Energy 50, 143–145 (2014). https://doi.org/10.3103/S0003701X14030098
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DOI: https://doi.org/10.3103/S0003701X14030098