Abstract
Zinc sulphide (ZnS) thin films were depositedon Indium oxide coaled glass substrates by Photo Chemical Deposition (PCD) with starting precursor of Zinc sulphate and sodium thiosulphate as a source material for Zn and S respectively. In addition the pH was varied (3 to 8) using sulphuric acid by adding up in the precursor. Later the ZnS thin films were annealed at 500°C and it was found that crystalline structure was improved. Zinc blende crystalline structure was observed on the thin films using X-ray diffractometer (XRD). The morphological behavior was observed using Scanning electron microscope (SEM) and it reveals that the size of the grain increases after annealing at 500°C. UV-spectrometer was used to analyze the aqueous solution optical behavior before and after deposition. The average thickness of thin film was estimated as ∼1.02 micron measured by stylus profilometer method.
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Nithiyanantham, S., Gopalakrishnan, R. & Ashok, K. Studies on the photochemical deposition (PCD) of II–VI compound semiconductor thin films of ZnS from aqueous solution. Appl. Sol. Energy 47, 239–242 (2011). https://doi.org/10.3103/S0003701X11030133
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DOI: https://doi.org/10.3103/S0003701X11030133