Reflectance Modification in Nanostructured Silicon Layers with Gradient Porosity
A significant change in effective reflectance spectra of nanostructured porous silicon layers grown with different times of metal-assisted chemical etching is detected. The low reflectances at the level of 5–10% measured in the spectral range of 200–400 nm are explained by strong elastic scattering of light in combination with absorption in silicon nanostructures, while a reflectance increase in the range of 500–1800 nm, which is visually detected as a “white” layer appearance is associated with Mie scattering in silicon nanostructures with gradient porosity under conditions of weak optical absorption. The results obtained are discussed from the viewpoint of potential applications of “black” and “white” nanocrystalline silicon in photonics and sensorics.
Keywordsoptical reflection light scattering photonics porous silicon nanocrystals
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The authors are grateful Prof. Zh. Zh. Zhanabaev and Prof. Zh. Utegulov for helpful discussions.
This study was supported by the Committee on Science of the Ministry of Education and Science of Republic Kazakhstan (grant no. AP05133366) and the Ministry of Science and Higher Education of the Russian Federation (State contracts nos. 16.2969.2017/4.6 and 16.7917.2017/8.9).
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