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Studying the Elastic Stresses at the Edges of a Section of the SOI Heterostructure of a Micro-Electromechanical Pressure Transducer with an Isolated Tensoframe

  • L. V. SokolovEmail author
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Abstract

The elastic stresses on the edges of a section of a micromechanical silicon tensoframe–glassy dielectric layer–silicon membrane structure are investigated, along with the topology of a local area on the surface of the transitional layer of a chip for a micro-electromechanical (MEMS) pressure transducer with an isolated 3D tensoframe.

Notes

ACKNOWLEDGMENTS

We are grateful to OOO Bruker manager V.V. Repnikov for our joint study of the elastic stresses on SOI samples of pressure tensotransducers.

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Copyright information

© Allerton Press, Inc. 2019

Authors and Affiliations

  1. 1.AO Ramenskoye Instrument Engineering BureauRamenskoeRussia

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