Studying a Silica Film Implanted with Zn and Irradiated with Swift Xe Ions
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The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around 10 nm in size at a depth near the projective range of zinc ions (Rp ≈ 40 nm) in the SiO2 film. Xe irradiation of the film dampens the exciton recombination–induced peak in the photoluminescence spectrum at a wavelength of 370 nm. It also raises the peak at 430 nm, which is associated with radiation defects. Bombarding the surface of the SiO2 film with Хе ions results in the formation of surface craters surrounded by hillocks, and the emergence of Zn-containing nanoparticles.
This work was supported by the RF Ministry of Science and Education as part of State Task no. 14, topic nos. 40.2 and 40.3, section nos. 00662014-0025 and 0066-2014-0024; and by the Russian Academy of Sciences’ Institute of Solid State Physics. Our scanning probe microscopy measurements were made at the MISiS shared resource center for Materials Science and Metallurgy with the financial support of the RF Ministry of Science and Higher Education as part of State Task no. 11.9706.2017/7.8.
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