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Developing and Manufacturing a Molecular Single-Electron Transistor with Isolated Side Gates

  • E. K. Morozova
  • V. R. Gaidamachenko
  • S. A. Daghesyan
  • E. S. SoldatovEmail author
  • E. K. Beloglazkina
Article
  • 4 Downloads

Abstract

A version of a molecular nanotransistor with improved efficiency and reliable isolation of side gates is developed and tested. The correlated nature of electronic transport in the transistor and high resistance of the isolation of the gates (more than 1 TΩ) ensure the correct mode of measuring the transistor control characteristics.

Notes

ACKNOWLEDGMENTS

This work was supported by the Russian Foundation for Basic Research, grant no. 18-37-00414.

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Copyright information

© Allerton Press, Inc. 2019

Authors and Affiliations

  • E. K. Morozova
    • 1
  • V. R. Gaidamachenko
    • 1
  • S. A. Daghesyan
    • 1
    • 2
  • E. S. Soldatov
    • 1
    • 2
    Email author
  • E. K. Beloglazkina
    • 1
  1. 1.Faculty of Physics, Moscow State UniversityMoscowRussia
  2. 2.Center for Quantum Technologies, Moscow State UniversityMoscowRussia

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