A Coulomb Blockade in a Nanostructure Based on Single Intramolecular Charge Center
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A novel technique for the production of metal electrodes of a nanotransistor with a nanogap less than 4 nm between them is developed on the basis of controlling the electromigration of previously suspended nanowires of the system. A method that allows the embedding of a molecule of Rh(III) terpyridine with aurophilic ligands between electrodes is elaborated, as well. The characteristics of electron transport through a system that consists of the specified molecule with a single-atom charge center indicate the correlated (single-electron) tunneling of electrons.
Keywordselectromigration atom molecule molecular electronics single-molecule transistor correlated tunneling of electrons
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- 6.J. M. Van Ruitenbeek, in Single-Molecule Electronics, Ed. by M. Kiguchi (Springer, Singapore, 2016), p. 1. doi 10.1007/978-981-10-0724-8_1Google Scholar