Single-electron transistor with an island formed by several dopant phosphorus atoms
- 45 Downloads
We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well-known CMOS compatible technological processes that are standard in semiconductor electronics and may be used in most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor (∼20 meV) allows one to observe single-electron effects in a wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated a single-electron transistor with controllable electron transport through two to three phosphorus dopants only.
Keywordssingle-electron transistor single-atom transistor silicon-on-insulator
Unable to display preview. Download preview PDF.
- 1.https://ark.intel.com/products/91317/Intel-Xeon-Processor-E5-2699-v4-55M-Cache-2_20-GHz.Google Scholar
- 2.D. V. Averin and K. K. Likharev, in Mesoscopic Phenomena in Solids, Ed. by B. L. Altshuler, P. A. Lee, and W. Richard Webb (North Holland, Amsterdam, 1971), p.173.Google Scholar