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Single-electron transistor with an island formed by several dopant phosphorus atoms

  • Condensed Matter Physics
  • Published:
Moscow University Physics Bulletin Aims and scope

Abstract

We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well-known CMOS compatible technological processes that are standard in semiconductor electronics and may be used in most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor (∼20 meV) allows one to observe single-electron effects in a wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated a single-electron transistor with controllable electron transport through two to three phosphorus dopants only.

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Authors and Affiliations

  1. Department of Physics, Moscow State University, Moscow, 119991, Russia

    S. A. Dagesyan, V. V. Shorokhov, D. E. Presnov, E. S. Soldatov, A. S. Trifonov, V. A. Krupenin & O. V. Snigirev

  2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991, Russia

    D. E. Presnov & A. S. Trifonov

Authors
  1. S. A. Dagesyan
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  2. V. V. Shorokhov
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  3. D. E. Presnov
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  4. E. S. Soldatov
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  5. A. S. Trifonov
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  6. V. A. Krupenin
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  7. O. V. Snigirev
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Corresponding author

Correspondence to S. A. Dagesyan.

Additional information

Original Russian Text © S.A. Dagesyan, V.V. Shorokhov, D.E. Presnov, E.S. Soldatov, A.S. Trifonov, V.A. Krupenin, O.V. Snigirev, 2017, published in Vestnik Moskovskogo Universiteta, Seriya 3: Fizika, Astronomiya, 2017, No. 5, pp. 32–38.

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Dagesyan, S.A., Shorokhov, V.V., Presnov, D.E. et al. Single-electron transistor with an island formed by several dopant phosphorus atoms. Moscow Univ. Phys. 72, 474–479 (2017). https://doi.org/10.3103/S0027134917050058

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  • DOI: https://doi.org/10.3103/S0027134917050058

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