The influence of the gas cluster ion beam composition on defect formation in targets
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Defect formation in silicon-on-sapphire films under the action of a gas beam of 30 keV argon cluster ions is studied. Rutherford backscattering in the channeling mode is used to demonstrate the formation of a large number of defects in the volume of a specimen that is irradiated by a cluster ion beam without mass separation. If atomic and light cluster ions are removed from the beam, defect-free etching of the specimen occurs.
Keywordscluster ions silicon-on-sapphire sputtering amorphization smoothing RBS
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