Abstract
Superlattices are used in modern light-emitting diodes to modify intentionally electron, phonon and/or photon transport within their volumes, which leads to their expected performance characteristics. In particular, superlattices may have a dramatic impact on device thermal properties. Superlattice thermal resistance is anisotropic and usually distinctly higher than its values in constituent bulk materials, which results from phonon reflections and/or phonon scatterings at numerous layer interfaces. In the present paper, thermal resistance of a typical superlattice of layer thicknesses neither much higher nor much lower than the phonon free path is discussed. Besides, as an important example, thermal resistance of the typical GaAs/AlAs superlattice is determined theoretically and compared with its measured values known from literature.
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Żak, D., Nakwaski, W. Thermal resistance of GaAs/AlAs superlattices used in modern light-emitting diodes. Opto-Electron. Rev. 22, 86–91 (2014). https://doi.org/10.2478/s11772-014-0181-3
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DOI: https://doi.org/10.2478/s11772-014-0181-3