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Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

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Opto-Electronics Review

Abstract

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

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Correspondence to I. I. Izhnin.

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Izhnin, I.I., Izhnin, A.I., Savytskyy, H.V. et al. Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates. Opto-Electron. Rev. 20, 375–378 (2012). https://doi.org/10.2478/s11772-012-0048-4

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  • DOI: https://doi.org/10.2478/s11772-012-0048-4

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