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Doping level of Mn in high temperature grown Zn1−x Mn x O studied through electronic charge distribution, magnetization, and local structure

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Abstract

Mn inclusion in the oxide based diluted magnetic semiconductor Zn1−x Mn x O (x = 0.04, 0.06, 0.08, and 0.10) grown by standard high temperature solid state reaction technique has been studied. The local and average structure of Zn1−x Mn x O was characterized by the super resolution technique maximum entropy method and pair distribution function analysis using the X-ray powder data. Magnetic studies on this material using a Vibrating Sample Magnetometer were also carried out to ascertain the doping level in Zn1−x Mn x O.

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Authors and Affiliations

  1. Research centre and PG Department of Physics, The Madura College, Madurai, 625 011, Tamil Nadu, India

    Ramachandran Saravanan & Santhanam Francis

  2. Electropyrometallurgy division, CECRI, Karaikudi, 630 006, Tamil Nadu, India

    John L. Berchmans

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  1. Ramachandran Saravanan
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  2. Santhanam Francis
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  3. John L. Berchmans
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Correspondence to Ramachandran Saravanan.

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Saravanan, R., Francis, S. & Berchmans, J.L. Doping level of Mn in high temperature grown Zn1−x Mn x O studied through electronic charge distribution, magnetization, and local structure. Chem. Pap. 66, 226–234 (2012). https://doi.org/10.2478/s11696-011-0129-8

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  • DOI: https://doi.org/10.2478/s11696-011-0129-8

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