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Structural, morphology and electrical properties of layered copper selenide thin film

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Central European Journal of Physics

Abstract

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

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Correspondence to Zainal A. Talib.

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Ying Chyi Liew, J., Talib, Z.A., Mahmood, W. et al. Structural, morphology and electrical properties of layered copper selenide thin film. centr.eur.j.phys. 7, 379–384 (2009). https://doi.org/10.2478/s11534-009-0057-1

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  • DOI: https://doi.org/10.2478/s11534-009-0057-1

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PACS (2008)

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