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On the topographic and optical properties of SiC/SiO2 surfaces

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Central European Journal of Physics

Abstract

The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.

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Author information

Authors and Affiliations

  1. DEF FEI Žilina University, Nálepku 1390, 03101, Liptovský Mikuláá, Slovakia

    Stanislav Jureckova

  2. Mathematical Institute SAS, Å tefánikova 49, 814 73, Bratislava, Slovakia

    Maria Jureckova

  3. Academy of Armed Forces of Gen. M. R. Štefánik, Demänová 393, 031 01, Liptovský Mikuláš, Slovakia

    Ferdinand Chovanec

  4. DFCM ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 587-0047, Japan

    Masao Takahashi

  5. FCFT, Slovak University of Technology, Radlinského 9, 812 37, Bratislava, Slovakia

    Hikaru Kobayashi & Milan Mikula

  6. Institute of Physics SAS, Dúbravská cesta 9, 84511, Bratislava, Slovakia

    Emil Pina

Authors
  1. Stanislav Jureckova
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  2. Maria Jureckova
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  3. Ferdinand Chovanec
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  4. Hikaru Kobayashi
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  5. Masao Takahashi
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  6. Milan Mikula
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  7. Emil Pina
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Corresponding author

Correspondence to Stanislav Jureckova.

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Jureckova, S., Jureckova, M., Chovanec, F. et al. On the topographic and optical properties of SiC/SiO2 surfaces. centr.eur.j.phys. 7, 321–326 (2009). https://doi.org/10.2478/s11534-009-0021-0

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  • DOI: https://doi.org/10.2478/s11534-009-0021-0

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