Skip to main content
SpringerLink
Log in

Ge diffusion on Si surfaces

  • Research Article
  • Published:
Central European Journal of Physics

Abstract

Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Yu.L. Gavrilyuk and V.G. Lifshits: “Effect of surface phases on the diffusion of gold on silicon”, Poverhnost, Vol. 4, (1983), pp. 82–89 (in Russian).

    Google Scholar 

  2. A.E. Dolbak, R.A. Zhachuk and B.Z. Olshanetsky: “Surface diffusion of Pb on clean Si surfaces”, Cent. Eur. J. Phys., Vol. 2, (2004), pp. 254–265.

    Google Scholar 

  3. A.E. Dolbak, B.Z. Olshanetsky, S.I. Stenin, S.A. Teys and T.A. Gavrilova: “Effect of Nickel on Clean Silicon Surfaces: Transport and Structure”, Surf. Sci., Vol. 218, (1989), pp. 37–54.

    Article  Google Scholar 

  4. A.E. Dolbak, B.Z. Olshanetskii and S.A. Tiis: “The Interaction of Cobalt with Clean Si(100) and (110) Surfaces”, Poverkhnost, Vol. 11, (1996), pp. 29–38 (in Russian).

    Google Scholar 

  5. A.E. Dolbak, R.A. Zhachuk and B.Z. Olshanetsky: “Mechanism of Cu transport along clean Si surfaces”, Cent. Eur. J. Phys., Vol. 1, (2003), pp. 463–473.

    Google Scholar 

  6. A.E. Dolbak, B.Z. Olshanetskii and S.A. Tiis: “Mechanism of the Transport of Nickel along a Si(111) Surface in the Presence of Adsorbed Cobalt Atoms”, JETP Lett., Vol. 69, (1999), pp. 459–461.

    Article  ADS  Google Scholar 

  7. A.E. Dolbak, B.Z. Olshanetsky and R.A. Zhachuk: “On Ni Diffusion at Si(111) Surface at Fe Coadsorption”, Phys. Low-Dim. Struct., Vol. 9/10, (1998), pp. 97–104.

    Google Scholar 

  8. B. Voigtlaender, M. Kawamura, N. Paul and V. Cherepanov: “Formation of Si/Ge nanostructures at surfaces by self-organization”, J. Phys.: Cond. Matt., Vol. 16, (2004), pp. S1535–S1551.

    Article  ADS  Google Scholar 

  9. H.M. Guo, Y.L. Wang, H.W. Liu, H.F. Ma, Z.H. Qin and H.J. Gao: “Formation of Ge nanoclusters on Si(111)-7×7 surface at high temperature”, Surface Sci., Vol. 561, (2004), pp. 227–232

    Article  Google Scholar 

  10. D. Srivastava and B.J. Garrison: “Adsorption and diffusion dynamics of a Ge adatom on the Si{100}(2×1) surface”, Phys. Rev. B, Vol. 46, (1992), pp. 1472–1479.

    Article  ADS  Google Scholar 

  11. V. Milman, D.E. Jesson, S.J. Pennycook, M.C. Payne, M.H. Lee and I. Stich: “Large scale ab initio study of the binding and diffusion of Ge adatom on the Si(100) surface”, Phys. Rev. B, Vol. 50, (1994), pp. 2663–2666.

    Article  ADS  Google Scholar 

  12. H.-J. Gossmann and G.J. Fisanick: “Surface diffusion and islanding in semiconductor nanostructures: Ge on Si”, J. Vac. Sci. Technol. Vol. A6, (1988), pp. 2037–2038.

    ADS  Google Scholar 

  13. Y.-W. Mo and M.G. Lagally: “Anisotropy in surface migration of Si and Ge on Si(001)”, Surface Sci., Vol. 248, (1991), pp. 313–320.

    Article  Google Scholar 

  14. H.J. Kim, Z.M. Zhao, J. Liu, V. Ozolins, J.Y. Chang and Y.H. Xie: “A technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si(001)”, J. Appl. Phys., Vol. 95, (2004), pp. 6065–6071.

    Article  ADS  Google Scholar 

  15. Y. Ymamoto, S. Ino and T. Ichikawa: “Surface Reconstruction on a Clean Si(110) Surface Observed by RHEED”, Jpn. J. Appl. Phys., Vol. 25, (1986), pp. L331–L334.

    Article  Google Scholar 

  16. P.W. Palmberg, G.E. Riach, R.E. Weber and N.C. Mac-Donnald: Handbook of Auger Electron Spectroscopy, Physical Electronics Industries Inc., Minnesota, 1972.

    Google Scholar 

  17. D. Brigs and M.P. Seach: Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy, John Willey & Sons, Chichester, New York, Brisbane, Toronto, Singapore, 1983.

    Google Scholar 

  18. T. Ichikawa and S. Ino: “RHEED Study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111) surface”, Surface Sci., Vol. 136, (1984), pp. 267–284.

    Article  Google Scholar 

  19. Y.-W. Mo, D.E. Savage, B.S. Swartzentruber and M.G. Lagally: “Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)”, Phys. Rev. Lett., Vol. 65, (1990), pp. 1020–1023.

    Article  ADS  Google Scholar 

  20. H.J. Osten, J. Klatt, G. Lippert, B. Dietrich and E. Bugiel: “Surfactant-controlled solid phase epitaxy of germanium on silicon”, Phys. Rev. Lett., Vol. 69, (1992), pp. 450–453.

    Article  ADS  Google Scholar 

  21. Y. Yamamoto: “RHEED-TRAXS study of superstructures induced by Ge and Sn adsorption on a Si(110) surface”, Surface Sci., Vol. 281, (1993), pp. 253–269.

    Article  Google Scholar 

  22. Ya.E. Gegusin: Surface diffusion on real crystall surface, In: Surface diffusion and spreading, Ya.E. Gegusin (Ed.), Moscow, Nauka, 1969, pp. 11–77 (in Russian).

    Google Scholar 

  23. T. Suzuoka: “Mathematical Analysis of Tracer Surface Diffusion”, J. Phys. Soc. Japan, Vol. 20, (1965), pp. 1259–1270.

    Article  Google Scholar 

  24. G.L. McVay and A.R. DuCharme: “The diffusion of germanium in silicon”, J. Appl. Phys., Vol. 44, (1973), pp. 1409–1410.

    Article  ADS  Google Scholar 

  25. G.L. McVay and A.R. DuCharme: “Diffusion of Ge in SiGe alloys”, Phys. Rev. B, Vol. 9, (1974), pp. 627–631.

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation

    Andrey E. Dolbak & Boris Z. Olshanetsky

Authors
  1. Andrey E. Dolbak
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Boris Z. Olshanetsky
    View author publications

    You can also search for this author in PubMed Google Scholar

About this article

Cite this article

Dolbak, A.E., Olshanetsky, B.Z. Ge diffusion on Si surfaces. centr.eur.j.phys. 4, 310–317 (2006). https://doi.org/10.2478/s11534-006-0015-0

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.2478/s11534-006-0015-0

Keywords

PACS (2006)

Search

Navigation