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Materials Science-Poland

, Volume 31, Issue 4, pp 572–576 | Cite as

Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy

  • Paulina KamyczekEmail author
  • Ewa Placzek-Popko
  • Eunika Zielony
  • Zbigniew Zytkiewicz
Research Article

Abstract

In this study we present the results of investigations on Schottky Au-GaN diodes by means of conventional DLTS and Laplace DLTS methods within the temperature range of 77–350 K. Si-doped GaN layers were grown by Molecular Beam Epitaxy technique (MBE) on sapphire substrates. DLTS signal spectra revealed the presence of four majority traps: two hightemperature and two low-temperature peaks. Using LDLTS method and Arrhenius plots the activation energy and capture cross sections were obtained. For two high-temperature majority traps they are equal to E1 = 0.65 eV, σ1 = 8.2 × 10−16cm2 and E2 = 0.58 eV, σ2 = 2.6 × 10−15 cm2 whereas for the two low-temperature majority traps E3 = 0.18 eV, σ3 = 9.72 × 10−18 cm2 and E4 = 0.13 eV, σ4 = 9.17 × 10−18 cm2. It was also found that the traps are related to point defects. Possible origin of the traps was discussed and the results were compared with the data found elsewhere [1–5].

Keywords

GaN DLTS LDLTS 

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Copyright information

© Versita Warsaw and Springer-Verlag Wien 2013

Authors and Affiliations

  • Paulina Kamyczek
    • 1
    Email author
  • Ewa Placzek-Popko
    • 1
  • Eunika Zielony
    • 1
  • Zbigniew Zytkiewicz
    • 2
  1. 1.Institute of PhysicsWroclaw University of TechnologyWroclawPoland
  2. 2.Institute of PhysicsPolish Academy of SciencesWarsawPoland

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