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Potassium Ion-Selective Field Effect Transistor with Urushi as the Membrane Matrix

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Abstract

A durable potassium ion-selective field effect transistor (ISFET) with an Urushi matrix membrane was fabricated. The potassium ion-sensing membrane is composed of valinomycin, di-2-ethylhexylphthalate, potassium tetrakis-(p-chlorophenyl)borate and Urushi. The best composition for the potassium ion-sensing membrane was determined with the results of electrochemical characteristics of Urushi ion selective electrodes. The optimal Urushi mixture was coated onto the gate region of the device, which was fabricated from a silicon-on-sapphire (SOS) wafer. The Urushi SOS/ISFET showed a linear response in the potassium ion activity range from 10° mol dm-3 to 10-4 mol dm-3 and about 50 mV per decade in potassium ion activity. The prepared Urushi SOS/ISFET has good durability, for over a month, because of the strong adhesion of the Urushi membrane to the Si3N4 gate.

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Authors and Affiliations

  1. Government Industrial Research Institute, Osaka, Ikeda, Osaka, 563, Japan

    Shin-Ichi Wakida, Masataka Yamane & Kazuo Hiiro

  2. Faculty of Engineering, University of Tokyo, Hongo, Tokyo, 113, Japan

    Teruaki Km Ara, Yusuke Ujihira & Takuo Sugano

Authors
  1. Shin-Ichi Wakida
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  2. Masataka Yamane
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  3. Kazuo Hiiro
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  4. Teruaki Km Ara
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  5. Yusuke Ujihira
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  6. Takuo Sugano
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Wakida, SI., Yamane, M., Hiiro, K. et al. Potassium Ion-Selective Field Effect Transistor with Urushi as the Membrane Matrix. ANAL. SCI. 4, 501–504 (1988). https://doi.org/10.2116/analsci.4.501

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  • DOI: https://doi.org/10.2116/analsci.4.501

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