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Experimental Evaluation of the Mo Ka X-Ray Probing Depth for a GaAs Wafer in a Total-Reflection X-Ray Fluorescence Analysis

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Abstract

The total reflection x-ray fluorescence (TXRF) method is a powerful tool for the surface analysis of flat materials, such as Si wafers. The probing depth of TXRF is an important factor in a quantitative TXRF analysis. This is the first time that the probing depth under total-reflection conditions was experimentally evaluated by analyzing the takeoff-angle dependence of x-ray fluorescence. Our experimental results, measuring different incident angles, fit the theoretical curves. Finally, the relationship between the probing depth and the incident angle was obtained. We found the takeoff-angle dependent measurement of x-ray fluorescence to be a powerful means for determining the probing depth in the TXRF method.

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Authors and Affiliations

  1. Institute for Materials Research, Tohoku University, Katahira, Aoba, Sendai, 980-77, Japan

    Kouichi Tsuji & Kazuaki Wagatsuma

  2. National Center for HREM, Lund University, P. O. Box 124, S-22100, Lund, Sweden

    Takeo Oku

Authors
  1. Kouichi Tsuji
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  2. Kazuaki Wagatsuma
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  3. Takeo Oku
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Tsuji, K., Wagatsuma, K. & Oku, T. Experimental Evaluation of the Mo Ka X-Ray Probing Depth for a GaAs Wafer in a Total-Reflection X-Ray Fluorescence Analysis. ANAL. SCI. 13, 351–354 (1997). https://doi.org/10.2116/analsci.13.351

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  • DOI: https://doi.org/10.2116/analsci.13.351

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