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Study of Epitaxy by RHEED (Reflection High Energy Electron Diffraction)-TRAXS (Total Reflection Angle X-Ray Spectroscopy)

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Abstract

By detecting characteristic X-rays excited during a RHEED (reflection high energy electron diffraction) experiment, a highly sensitive measurement of the adsorbate is possible if the X-ray detector is placed at the critical angle (θC) corresponding to the total reflection of the X-rays. Furthermore, by measuring the glancing angle (θg) dependence, it is possible to analyze the depth distribution of the composition at the surface. The resolution in the depth direction is about 1 ML. By applying these methods to studying the epitaxy of metals (Ag, Au, Sn, Ga and In) on Si( 111 )-n × m- M surface structures (metal-induced Si(111) reconstructed surface structures), new growth modes were observed, such as the substitution-atom growth mode, the floating-atom growth mode and some complex growth modes.

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  1. Department of Physics, Graduate School of Science, University of Tokyo, Hongo, Tokyo, 113, Japan

    Shozo Ino

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  1. Shozo Ino
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Ino, S. Study of Epitaxy by RHEED (Reflection High Energy Electron Diffraction)-TRAXS (Total Reflection Angle X-Ray Spectroscopy). ANAL. SCI. 11, 539–543 (1995). https://doi.org/10.2116/analsci.11.539

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  • DOI: https://doi.org/10.2116/analsci.11.539

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