Abstract
A low temperature drift curvature-compensated complementary metal oxide semiconductor (CMOS) bandgap reference is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TlnT (T is the thermodynamic temperature) to the traditional 1st-order compensated bandgap. To reduce the offset of the amplifier and noise of the bandgap reference, input differential metal oxide semiconductor field-effect transistors (MOSFETs) of large size were used in the amplifier and to keep a low quiescent current, these MOSFETs all work in weak inversion. The voltage reference’s temperature curvature has been further corrected by trimming a switched resistor network. The circuit delivers an output voltage of 3 V with a low dropout regulator (LDO). The chip was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC)’s 0.35-μm CMOS process, and the temperature coefficient (TC) was measured to be only 2.1×10−6/°C over the temperature range of −40–125 °C after trimming. The power supply rejection (PSR) was −100 dB @ DC and the noise was 42 μV (rms) from 0.1 to 10 Hz.
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Project (No. 2008ZX01020-001) supported by the National Science and Technology Major Project, China
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Ning, Zh., He, Ln. A low drift curvature-compensated bandgap reference with trimming resistive circuit. J. Zhejiang Univ. - Sci. C 12, 698–706 (2011). https://doi.org/10.1631/jzus.C1000440
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DOI: https://doi.org/10.1631/jzus.C1000440