摘要
提出一种在微波频段具有宽带、 高效率的氮化镓 (GaN)功率放大器. 该功率放大器采用0.15 μm栅长GaN-HEMT工艺, 其工作频段可以覆盖整个K频段, 即17–26.5 GHz. 为获得更好的输出功率和功率附加效率 (PAE), 根据晶体管的性能, 设计了最优前后级驱动比和最佳晶体管尺寸, 并采用宽带低损耗电路拓扑结构, 实现宽带高效率设计. 同时, 将谐波控制结构巧妙地集成到驱动级匹配电路中, 提升高频效率, 确保整个频段内获得较高功率附加效率. 该功率放大器采用三级放大拓扑结构, 在连续波条件下, 测试结果表明, 在17–26.5 GHz频带范围内饱和输出功率超过42.5 dBm, 平均PAE为30%, 在19.8 GHz时PAE达到最大, 为32.1%, 输出功率平坦度优于1.0 dB. 该芯片结构紧凑, 面积仅为4.2 mm×3.0 mm, 可广泛应用于收发组件、 无线通信、 电子测量仪器等领域.
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Ming LI designed the research. Ming LI and Quan ZHENG processed the data. Ming LI drafted the paper. Quan ZHENG helped organize the paper. Zhiqun LI, Lanfeng LIN, and Hongqi TAO revised and finalized the paper.
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Ming LI, Zhiqun LI, Quan ZHENG, Lanfeng LIN, and Hongqi TAO declare that they have no conflict of interest.
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Li, M., Li, Z., Zheng, Q. et al. A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design. Front Inform Technol Electron Eng 23, 346–350 (2022). https://doi.org/10.1631/FITEE.2000513
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DOI: https://doi.org/10.1631/FITEE.2000513