Abstract
The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS0.8Se0.2 thin films on indium-tin-oxide(ITO) glas substrates were investigated in this work. TheX-ray diffraction (XRD) results indicated that high quality polycrystalline ZnS0.8Se0.2 thin film grown at the optimized temperature had a prefered orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order of a few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS0.8Se0.2 photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve (LCLV) with high resolution feasible.
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Project supported by the National Natural Science Foundation of China (No. 59910161981) and RGC grant from the Hong Kong Government Grant (No. NSFC/HKUST 35), China
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Da-ke, S., Gao-rong, H., Pi-yi, D. et al. ZnS0.8Se0.2 film for high resolution liquid crystal light valve. J. Zheijang Univ.-Sci. 5, 212–217 (2004). https://doi.org/10.1631/BF02840925
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DOI: https://doi.org/10.1631/BF02840925