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Epitaxial integration of MnTe with Bi2Te3

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Abstract

Thin film heterojunctions comprised of topological insulator and magnetic insulator layers provides a unique opportunity to develop highly energy efficient microelectronics. We addressed a key challenge towards the demonstration of this heterojunction—epitaxial growth of antiferromagnetic material (MnTe) directly interfacing the topological insulator (Bi2Te3) surface with an abrupt interface between the layers for efficient magnetic coupling. The growth of MnTe is carried out by atomic layer deposition at low temperatures to preserve the pristine surface conditions of the topological insulator. Additionally, we demonstrated that MnTe can be grown conformally by atomic layer deposition with excellent thickness uniformity at trenches with 10:1 aspect ratio.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

This material is based upon work supported by the Army STTR Program Office under Contract No. W911NF-21-C-0037.

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Authors and Affiliations

  1. Radiation Monitoring Devices, Inc., Watertown, MA, 02472, USA

    O. Maksimov & H. B. Bhandari

  2. Department of Physics, Boston College, Chestnut Hill, MA, 02467, USA

    B. Rachmilowitz & I. Zeljkovic

Authors
  1. O. Maksimov
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  2. H. B. Bhandari
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  3. B. Rachmilowitz
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  4. I. Zeljkovic
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Correspondence to O. Maksimov.

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Maksimov, O., Bhandari, H.B., Rachmilowitz, B. et al. Epitaxial integration of MnTe with Bi2Te3. MRS Advances 8, 183–187 (2023). https://doi.org/10.1557/s43580-022-00423-y

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  • DOI: https://doi.org/10.1557/s43580-022-00423-y

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