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Impact of Ga and In co-doping on morphology, structure, and emission of ZnO nanocrystal films

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Abstract

The influence of Ga and In co-doping on morphology, crystal structure, photoluminescence (PL), and electrical resistivity has been studied in ZnO:Ga:In nanocrystal (NC) films. The films were deposited by ultrasonic spray pyrolysis on silicon substrates heated to 400 °C. A set of samples was prepared, where the In content was 1 at.%, but the Ga contents were varied in the range of 0.5–2.5 at.%. All films were annealed at 400 °C for 4 h in a nitrogen flow. ZnO:Ga:In NC films are characterized by the wurtzite crystal structures for all Ga concentrations. Non-monotonic variations in morphology, crystal lattice parameters, and the intensity of near band edge (NBE) emission have been detected in the films versus Ga contents. High-quality NC films with the wurtzite crystal structure, planar morphology, bright NBE emission, and the small intensity of defect related PL bands have been obtained for the 1.5 at.% Ga in the films. The reasons for the non-monotonic variation of the emission and structural parameters with Ga contents have been analyzed and discussed.

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Acknowledgments

The authors thank the financial support of CONACYT Mexico (pt. 258224) and SIP-IPN, Mexico (pt. 20210400 and pt. 20210947) as well as thank Dr. Hector Calderon for the permission to work on the XRD equipment in his laboratory.

Funding

The funder was funded by CONACYT, Grant no. (258224).

Author information

Authors and Affiliations

  1. Instituto Politécnico Nacional, UPIITA, 07320, México City, México

    Brahim El Filali

  2. Instituto Politécnico Nacional, ESFM, 07738, México City, México

    Tetyana Torchynska

  3. Instituto Politécnico Nacional, ESIME Zac., 07738, México City, México

    Georgiy Polupan

  4. Instituto Politécnico Nacional, UPIIH, 42162, Pachuca, Hidalgo, México

    José Alberto Andraca Adame

  5. Instituto Politécnico Nacional, ESIME Cul., 04260, México City, México

    Jorge Luis Ramirez Garcia

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  1. Brahim El Filali
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  2. Tetyana Torchynska
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Correspondence to Brahim El Filali.

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The authors declare and confirm that the article is the authors’ original work and they have no conflict of interests: no financial/personal interest or belief that could affect their objectivity.

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El Filali, B., Torchynska, T., Polupan, G. et al. Impact of Ga and In co-doping on morphology, structure, and emission of ZnO nanocrystal films. MRS Advances 6, 928–931 (2021). https://doi.org/10.1557/s43580-021-00173-3

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  • DOI: https://doi.org/10.1557/s43580-021-00173-3

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