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Improvement of appearance probability of conductance quantization by hydrogen thermal treatment in Pt/NiO/Pt-resistive switching cells

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Abstract

Hydrogen thermal treatment effects on dominant cell conductance characteristics in Pt/NiO/Pt-resistive switching cells were investigated. Although conductance quantization can be observed during voltage application to the cells at room temperature in air, variation of voltage to reach the quantized conductance was large, because the amount controllability of oxygen vacancies may be possibly inadequate. To reduce distribution of oxygen-vacancy density at grain boundaries in the NiO layer, hydrogen thermal treatment below 150 °C is effective to improve appearance probability of quantum point contact without too strong heat effect.

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Authors and Affiliations

  1. National Institute of Technology, Maizuru College, Kyoto, Japan

    Yusuke Nishi

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  1. Yusuke Nishi
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Correspondence to Yusuke Nishi.

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Nishi, Y. Improvement of appearance probability of conductance quantization by hydrogen thermal treatment in Pt/NiO/Pt-resistive switching cells. MRS Advances 6, 554–557 (2021). https://doi.org/10.1557/s43580-021-00127-9

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  • DOI: https://doi.org/10.1557/s43580-021-00127-9

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