Skip to main content
SpringerLink
Log in

Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices

  • Original Paper
  • Published:
MRS Advances Aims and scope Submit manuscript

Abstract

Ion implantation is an essential step for selective area p-type doping of GaN, which is required for the development of vertical GaN devices that will help realize the potential of wide bandgap semiconductor GaN in power electronics. Changes to the microstructure of GaN epilayers on ion implantation and subsequent annealing were characterized by synchrotron X-ray topography and high-resolution X-ray diffraction (HRXRD). Enlarged contrast of screw and edge types of threading dislocations (TDs) on X-ray topographs after homoepitaxial growth is likely due to interaction of the dislocations with point defects. X-ray topographs reveal ion implantation does not change the distribution of dislocations in the wafer. HRXRD spectra have satellite peaks from lattice damage due to implantation. This damage is completely healed upon annealing. Strain and tilt maps derived from X-ray rocking curve topographs also show that annealing leads to an improvement in lattice bending.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
$34.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or eBook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

References

  1. S. Usami, N. Mayama, K. Toda, A. Tanaka, M. Deki, S. Nitta, Y. Honda, H. Amano, Appl. Phys. Lett. 114, 232105 (2019)

    Article  Google Scholar 

  2. S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano, Y. Sugawara, Appl. Phys. Lett. 112, 182106 (2018)

    Article  Google Scholar 

  3. B. Rackauskas, S. Dalcanale, M. Uren, T. Kachi, M. Kuball, Appl. Phys. Lett. 112, 233501 (2018)

    Article  Google Scholar 

  4. X. Cao, H. Lu, S. LeBoeuf, C. Cowen, S. Arthur, W. Wang, Appl. Phys. Lett. 87, 053503 (2005)

    Article  Google Scholar 

  5. Y. Liu, S. Hu, H. Peng, T. Ailihumaer, B. Raghothamachar, M. Dudley, ECS Trans. 98, 21 (2020)

    Article  CAS  Google Scholar 

  6. Y. Liu, B. Raghothamachar, H. Peng, T. Ailihumaer, M. Dudley, R. Collazo, J. Tweedie, Z. Sitar, F.S. Shahedipour-Sandvik, K.A. Jones, J. Cryst. Growth 551, 125903 (2020)

    Article  CAS  Google Scholar 

  7. B. Raghothamachar, Y. Liu, H. Peng, T. Ailihumaer, M. Dudley, F.S. Shahedipour-Sandvik, K.A. Jones, A. Armstrong, A.A. Allerman, J. Han, H. Fu, K. Fu, Y. Zhao, J. Cryst. Growth 544, 125709 (2020)

    Article  CAS  Google Scholar 

  8. R. Dwiliński, R. Doradziński, J. Garczyński, L. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, J. Cryst. Growth 310, 3911–3916 (2008)

    Article  Google Scholar 

  9. T. Nakamura, K. Motoki, GaN substrate technologies for optical devices. Proc. IEEE 101, 2221 (2013)

    Article  CAS  Google Scholar 

  10. I.C. Kizilyalli, A.P. Edwards, H. Nie, D. Bour, T. Prunty, D. Disney, IEEE Electron Device Lett. 35, 247–249 (2014)

    Article  CAS  Google Scholar 

  11. S.O. Kucheyev, J.S. Williams, S.J. Pearton, Mater. Sci. Eng. 33, 51–108 (2001)

    Article  Google Scholar 

  12. M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki, K. Fukuda, J. Appl. Phys. 108, 013511 (2010)

    Article  Google Scholar 

  13. B. Raghothamachar, M. Dudley, G. Dhanaraj, X-ray topography techniques for defect characterization of crystals, in ed. by G. Dhanaraj, K. Byrappa, V. Prasad, M. Dudley (Springer handbook of crystal growth, Springer, 2010), p. 1425

  14. J. Guo, Y. Yang, B. Raghothamachar, M. Dudley, S. Stoupin, J. Electron. Mater. 47, 903–909 (2018)

    Article  CAS  Google Scholar 

  15. K. Horibuchi, S. Yamaguchi, Y. Kimoto, K. Nishikawa, T. Kachi, Semicond. Sci. Technol. 31, 034002 (2016)

    Article  Google Scholar 

  16. F. Gloux, T. Wojtowicz, P. Ruterana, K. Lorenz, E. Alves, J. Appl. Phys. 100, 073520 (2006)

    Article  Google Scholar 

  17. Y. Wang, T. Bai, C. Li, M.J. Tadjer, T.J. Anderson, J.K. Hite, M.A. Mastro, C.R. Eddy Jr., K.D. Hobart, B.N. Feigelson, ECS J. Solid State Sci. Technol. 8, P70 (2019)

    Article  CAS  Google Scholar 

  18. G.S. Aluri, M. Gowda, N.A. Mahadik, S.G. Sundaresan, M.V. Rao, J.A. Schreifels, J. Freitas Jr., S. Qadri, Y.-L. Tian, J. Appl. Phys. 108, 083103 (2010)

    Article  Google Scholar 

  19. B. Pong, C. Pan, Y. Teng, G. Chi, W.-H. Li, K. Lee, C.-H. Lee, J. Appl. Phys. 83, 5992–5996 (1998)

    Article  CAS  Google Scholar 

  20. T. Ailihumaer, H. Peng, B. Raghothamachar, M. Dudley, G. Chung, I. Manning, E. Sanchez, J. Electron. Mater. 49, 3455–3464 (2020)

    Article  CAS  Google Scholar 

Download references

Acknowledgments

X-ray topography work is supported by ARPA-E through PNDIODES program (DE-AR0001115; Project Director: I. Kizilyalli). Synchrotron X-ray topographs were recorded using the resources of the Advanced Photon Source (Beamline 1-BM), a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under contract no. DE-AC02-06CH11357. Joint Photon Sciences Institute at Stony Brook University provided partial support for travel and subsistence at the Advanced Photon Source. The views expressed in the article do not necessarily represent the views of the U.S. Department of Energy or the US Government.

Author information

Authors and Affiliations

  1. Department of Materials Science & Chemical Engineering, Stony Brook University, Stony Brook, NY, 11794, USA

    Yafei Liu, Hongyu Peng, Zeyu Chen, Tuerxun Ailihuamaer, Shanshan Hu, Balaji Raghothamachar & Michael Dudley

Authors
  1. Yafei Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hongyu Peng
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Zeyu Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Tuerxun Ailihuamaer
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Shanshan Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Balaji Raghothamachar
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Michael Dudley
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yafei Liu.

Ethics declarations

Conflict of interest

The authors declare that they have no conflict of interest.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Liu, Y., Peng, H., Chen, Z. et al. Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices. MRS Advances 6, 450–455 (2021). https://doi.org/10.1557/s43580-021-00098-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/s43580-021-00098-x

Search

Navigation