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Modified sheet resistance and specific contact resistance of Ni-, Pt- and Ti-based contacts to n-type 3C-SiC

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Abstract

The modified sheet resistance, Rsk, and specific contact resistance, ρc, of Ni-, Pt- and Ti-based contacts to n-type 3C-SiC have been measured using the circular transmission line model (CTLM). The Ni/Pt/Ni/Pt and Pt/Ni contacts have shown a continuous decrease in Rsk and ρc as a function of annealing temperature from 20 to 1000 °C. A minimum value of Rsk of 5.5 Ω/sq was obtained for Ni/Pt/Ni/Pt contacts at 1000 °C. In comparison, the Ti/Pt and Ti/Ni/Au contacts have shown a significant reduction in Rsk and ρc only after annealing at 900–1000 °C. The ratio of Rsh/Rsk has been determined for each type of contact after annealing at 1000 °C.

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Data availability

The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

References

  1. F. Roccaforte, F. La Via, V. Raineri, Int. J. High Speed Electron. Syst. 15(4), 781–820 (2005)

    Article  CAS  Google Scholar 

  2. R. Maboudian, C. Carraro, D.G. Senesky, C.S. Roper, JVST A31(5), 050805–050811 (2013)

    Google Scholar 

  3. K. Vasilevskiy, K. Zekentes, N. Wright in Advancing Silicon Carbide Electronics Technology I, Ed. by K. Zekentes, K. Vasilevskiy, Millersville. Mater. Res. Forum 37 (2018).

  4. D. Massoubre, L. Wang, J. Chai, G. Walker, L. Hold, M. Lobino, S. Dimitriev, A. Iacopi, NSTI-Nanotech. 2, 416–419 (2014)

    CAS  Google Scholar 

  5. J. Wan, M.A. Capane, M.R. Melloch, Solid State Electron. 46(8), 1227–1230 (2002)

    Article  CAS  Google Scholar 

  6. S. Tengeler, B. Kaiser, D. Chaussende, J. Jaegermann, Appl. Surf. Sci. 400, 6–13 (2017)

    Article  CAS  Google Scholar 

  7. J. Eriksson, F. Roccaforte, F. Giannazzo, R.L. Nigro, V. Raineri, J. Lorenzzi, G. Ferro, Appl. Phys. Lett. 94, 112104 (2009)

    Article  Google Scholar 

  8. M. Spera, G. Greco, R.L. Nigro, C. Bongiorno, F. Giannazzo, M. Zielinski, F. La Via, F. Roccaforte, Mater. Sci. Semicond. Process 93, 295–298 (2019)

    Article  CAS  Google Scholar 

  9. A.E. Bazin, J.F. Michaud, C. Autret-Lambert, F. Cayrel, T. Chassagne, M. Portail, M. Zielinski, E. Collard, D. Alquier, Mater. Sci. Eng. B 171(1–3), 120–126 (2010)

    Article  CAS  Google Scholar 

  10. J. Zhang, R.T. Howe, R. Maboudian, Mater. Sci. Eng. B 139, 235–239 (2007)

    Article  CAS  Google Scholar 

  11. J. Biscarrat, X. Song, J.F. Michaud, F. Cayrel, M. Portail, M. Zielinski, T. Chassagne, E. Collard, D. Alquier, Mater. Sci. Forum 711, 179–183 (2012)

    Article  CAS  Google Scholar 

  12. G.K. Reeves, H.B. Harrison, IEEE Electron Dev. Lett. 3(5), 111–113 (1982)

    Article  Google Scholar 

  13. G.K. Reeves, Solid State Electron. 23(5), 487–490 (1980)

    Article  CAS  Google Scholar 

  14. G.K. Reeves, P.W. Leech, H.B. Harrison, Solid State Electron. 38(4), 745–751 (1995)

    Article  CAS  Google Scholar 

  15. P.W. Leech, J. Appl. Phys. 77, 2544–2548 (1995)

    Article  CAS  Google Scholar 

  16. P.W. Leech, G.K. Reeves, Solid State Electron. 38(4), 781–785 (1995)

    Article  CAS  Google Scholar 

  17. N. Lundberg, M. Östling, Solid State Electron. 39(11), 1559–1565 (1996)

    Article  CAS  Google Scholar 

  18. M. Hajłasz, J.J.T.M. Donkers, S.J. Sque, S.B.S. Heil, D.J. Gravesteijn, F.J.R. Rietveld, J. Schmitz, Appl. Phys. Letts. 104, 242109 (2014)

    Article  Google Scholar 

  19. M. Spera, C. Miccoli, R.L. Nigro, C. Bongiorno, D. Corso, S. Di Franco, F. Iucolano, F. Roccaforte, G. Greco, Mater. Sci. Semicond. Process. 78, 111–117 (2018)

    Article  CAS  Google Scholar 

  20. H.P. Kattelus, J.L. Tandon, M.-A. Nicolet, Solid State Electron. 29(9), 903–905 (1986)

    Article  CAS  Google Scholar 

  21. L. Wang, S. Dimitrijev, J. Han, F. Iocopi, L. Hold, P. Tanner, H.B. Harrison, Thin Solid Films 519, 6443–6446 (2011)

    Article  CAS  Google Scholar 

  22. Y. Pan, G.K. Reeves, P.W. Leech, A.S. Holland, IEEE Trans. Electron. Dev. 60, 1202–1207 (2013)

    Article  Google Scholar 

  23. P.W. Leech, M.H. Kibel, A.J. Barlow, G.K. Reeves, A.S. Holland, P. Tanner, Microelectron. Eng. 215, 111016 (2019)

    Article  CAS  Google Scholar 

  24. G.K. Reeves, M.W. Lawn, R.G. Elliman, J. Vac. Sci. Technol. A 10(5), 3203–3206 (1992)

    Article  CAS  Google Scholar 

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Acknowledgments

This work was performed in part at the Queensland (Griffith) and Victorian (La Trobe) nodes of the Australian National Fabrication Facility (a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australian Research).

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Authors and Affiliations

  1. School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia

    Patrick W. Leech

  2. Centre for Materials and Surface Science, La Trobe University, Bundoora, VIC, Australia

    Martyn H. Kibel

  3. Queensland Micro and Nanotechnology Centre, Griffith University, Brisbane, Australia

    Phillip Tanner

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  1. Patrick W. Leech
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  2. Martyn H. Kibel
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Correspondence to Patrick W. Leech.

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Leech, P.W., Kibel, M.H. & Tanner, P. Modified sheet resistance and specific contact resistance of Ni-, Pt- and Ti-based contacts to n-type 3C-SiC. MRS Advances 6, 445–449 (2021). https://doi.org/10.1557/s43580-021-00072-7

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  • DOI: https://doi.org/10.1557/s43580-021-00072-7

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